1 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features and performance ? 36 dbm vsat band psat ? 22 db nominal gain ? 25 - 31 ghz frequency range ? 0.25m phemt technology ? bias conditions: 6 v, 2.1 a (quiescent) up to 4 a under rf drive ? package dimensions: 13.34 x 9.65 x 1.85 mm (0.525 x 0.380 x 0.073 in) measured performance bias conditions: vd=6 v idq=2.1 a primary applications ? satellite ground terminals ? point to point product description the triquint TGA4905-CP is a compact 4 watt high power amplifier packaged mmic for ka-band applications. the part is designed using triquint?s proven standard 0.25 um gate power phemt production process. the tga4905 provides a nominal 36 dbm of output power at an input power level of 18 dbm from 25-31 ghz with a small signal gain of 22 db. the part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and lmds. the TGA4905-CP is 100% rf tested to ensure performance compliance. 4 watt ka band packaged amplifier datasheet subject to change without notice
2 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings symbol parameter 1 / value notes v d drain voltage 8 v 2 / v g gate voltage range -5 v to 0 v i d drain current (quiescent) 3.0 a 2 / | i g | gate current 62 ma p in input continuous wave power 24 dbm 2 / p d power dissipation 28 w 2 / 3 / t ch operating channel temperature 200 c 4 / 5 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a baseplate temperature of 70 c, the median life is 7.3e3 hours. 4 / these ratings apply to each individual fet. 5 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii rf characterization table (t a = 25 c, nominal) (vd = 6 v, idq = 2.1 a) symbol parameter test condition typical units gain small signal gain f = 25 ? 31ghz 22 db irl input return loss f = 25 ? 31ghz 10 db orl output return loss f = 25 ? 31ghz 8 db pwr output power @ psat f = 25 ? 31ghz 36 dbm
4 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of package) v d = 6 v i d = 2.1 a (quiescent) p diss = 12.6 w 128.35 4.63 6.9 e+6 note: backside of package is at 70 c baseplate temperature. worst ca se is at saturated output power when dc power consumption rises to 23 w with 4 w rf power delivered to load. power dissipated is 19 w and the temperature rise in the channel is 88 c. the channel temperature is 158 c assuming a 70 c baseplate temperature and the median life is 4.4e5 hours. median lifetime (tm) vs. channel temperature
5 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured performance v d = 6 v idq = 2.1 a
6 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured performance v d = 6 v idq = 2.1 a
7 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test.
8 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing top view side view 0.8153 0.0028/ 0.0024 0.0000 lid substrate stack . 1.8542 .005 dimensions in inches 0.073 +/- 0.005 0.000 0.032 +0.003/-0.002 0 .00 ( 0.0 0 0) 1.02 x 1.05 1.02 x 1.05 1.02 x 1.05 2.66 x 0.61 1.02 x 1.03 1.02 x 1.03 1.02 x 1.03 2.03 x 0.57 rf ground through backside bond pad #8 (n/c) bond pad #7 (n/c) bond pad #6 (n/c) bond pad #5 (rf output) bond pad #4 (vd2) bond pad #3 (vd1) bond pad #2 (vg) bond pad #1 (rf input) units: millimeters (inches) tolerance: +/-0.08 (0.003) (0.044 x 0.041) (0.044 x 0.041) (0.044 x 0.041) (0.105 x 0.240) (0.044 x 0.040) (0.044 x 0.040) (0.044 x 0.040) (0.080 x 0.022) 1 2 3 4 5 6 7 8 0.00 (0.000) 0.11 (0.004) 0.64 (0.025) 1.16 (0.046) 1.72 (0.068) 3.16 (0.124) 4.38 (0.172) 4.83 (0.190) 5.24 (0.206) 6.42 (0.253) 7.93 (0.312) 8.47 (0.334) 8.98 (0.353) 9.48 (0.373) 9.65 (0.380) 0.00 (0.000) 0.15 (0.006) 1.73 (0.068) 2.52 (0.099) 3.21 (0.126) 4.14 (0.163) 4.92 (0.193) 6.68 (0.263) 8.46 (0.333) 10.19 (0.401) 11.66 (0.459) 13.20 (0.520) 13.34 (0.525) hole diameter = 1.98 (0.078), 4x
9 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias schematic gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test.
10 TGA4905-CP may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com ordering information part package style TGA4905-CP carrier plate assembly of a TGA4905-CP into a module manual assembly for prototypes 1. clean the module with acetone. rinse with alcohol and di water. allow the module to fully dry. 2. to improve the thermal and rf performance, triq uint recommends attaching a heatsink to the bottom of the package. if the tga4905 is mounted to the heatsi nk with mounting screws, an indium shim or other compliant material should be inserted between t he tga4905 and the heatsink to reduce thermal contact resistance due to air gaps. the tga4905 may also be mounted with diemat dm6030hk conductive epoxy or an equivalent high thermal conductivity epoxy. 3. the dc and rf interconnects may be gold bondwires or gold ribbons. the rf interconnects should be as short as possible. a minimum of two 1 mil wire s are recommended for the rf input, rf output, vg, and vd1. six bondwires are recommended for vd2.
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